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Ion Implantation and Synthesis of Materials

Parametre

Počet strán
280 stránok
Čas čítania
10 hodin

Viac o knihe

Focusing on the physics and materials science, this book delves into ion implantation and ion beam modification, crucial for silicon integrated circuit technology. It discusses the intricacies of ion-solid interactions, predicting ion ranges, and addressing lattice disorder. The text covers essential processes like shallow-junction formation and the innovative use of hydrogen ion beams for silicon slicing. Additionally, it explores topics such as ion-beam mixing, stresses, and sputtering, highlighting their significance in enhancing materials properties and performance.

Vydanie

Nákup knihy

Ion Implantation and Synthesis of Materials, James W. Mayer, Michael Nastasi

Jazyk
Rok vydania
2010
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