Band structure effects and quantum transport

Topic of this thesis is the development and extension of quantum transport simulators for the modeling of nanowire and planar field effect transistors (FETs) at the nanometer scale, as well as the investigation of band structure effects by various atomistic methods in order to improve the effective mass approximation (EMA) used by the present simulators. In this context, nonparabolicity (NP) models have been developped and validated by means of detailed comparisons with a full-band tight-binding quantum transport simulator. Inelastic scattering processes and NP have been taken simultaneously into account for the simulation of nanowire FETs in the final part of the work.