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The book offers a comprehensive review of intrinsic point defects and impurities in silicon, detailing their structures, energetic properties, and diffusion behavior. It emphasizes experimental and theoretical findings, providing insights into electrical levels and spectroscopic signatures. Fundamental concepts such as thermodynamics, diffusion, and reaction kinetics are also discussed, making the text accessible for newcomers while serving as a valuable reference for experts in semiconductor technology and solid-state physics.
Nákup knihy
Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon, Peter Pichler
- Jazyk
- Rok vydania
- 2012
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- Titul
- Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
- Jazyk
- anglicky
- Autori
- Peter Pichler
- Vydavateľ
- Springer Vienna
- Rok vydania
- 2012
- Väzba
- mäkká
- Počet strán
- 588
- ISBN13
- 9783709172049
- Kategórie
- Príroda všeobecne
- Anotácia
- The book offers a comprehensive review of intrinsic point defects and impurities in silicon, detailing their structures, energetic properties, and diffusion behavior. It emphasizes experimental and theoretical findings, providing insights into electrical levels and spectroscopic signatures. Fundamental concepts such as thermodynamics, diffusion, and reaction kinetics are also discussed, making the text accessible for newcomers while serving as a valuable reference for experts in semiconductor technology and solid-state physics.