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The book offers an in-depth examination of intrinsic point defects and impurities in silicon, highlighting their impact on semiconductor devices. It compiles essential data on defect structures, energetic properties, electrical levels, and diffusion behavior, derived from both experimental and theoretical studies. The discussion includes fundamental concepts such as thermodynamics and reaction kinetics, making it suitable for both newcomers and experts in solid-state physics and semiconductor process technology.
Nákup knihy
Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon, Peter Pichler
- Jazyk
- Rok vydania
- 2004
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- (pevná)
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- Titul
- Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
- Jazyk
- anglicky
- Autori
- Peter Pichler
- Vydavateľ
- Springer, Wien
- Rok vydania
- 2004
- Väzba
- pevná
- Počet strán
- 554
- ISBN13
- 9783211206874
- Kategórie
- Príroda všeobecne
- Anotácia
- The book offers an in-depth examination of intrinsic point defects and impurities in silicon, highlighting their impact on semiconductor devices. It compiles essential data on defect structures, energetic properties, electrical levels, and diffusion behavior, derived from both experimental and theoretical studies. The discussion includes fundamental concepts such as thermodynamics and reaction kinetics, making it suitable for both newcomers and experts in solid-state physics and semiconductor process technology.