Ti-Sb-Te Phase Change Materials: Component Optimisation, Mechanism and Applications

Focusing on innovative materials, this book presents a Ti-Sb-Te alloy that enhances high-speed and low-power phase-change memory applications. It highlights a distinct phase-change mechanism compared to traditional Ge2Sb2Te5, leading to improved performance. Through systematic optimization of material components, the author details the successful fabrication of a phase-change memory chip utilizing 40-nm complementary metal-oxide semiconductor technology, showcasing its advantages for various embedded applications.