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Broadband amplifiers for high data rates using InP, InGaAs double heterojunction bipolar transistors
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This work describes the development process of state-of-the-art electrical broadband amplifiers, which are suitable as modulator drivers in electrical time division multiplex (ETDM) systems, operating at 80 Gbit/s. The realization is successfully accomplished in three major development steps: optimization of the transistor geometry of InP-based Double Heterojunction Bipolar Transistors (DHBT), extraction of large- and small-signal models, and design and realization of lumped and distributed amplifiers.
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Broadband amplifiers for high data rates using InP, InGaAs double heterojunction bipolar transistors, Karl Schneider
- Jazyk
- Rok vydania
- 2006
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- Titul
- Broadband amplifiers for high data rates using InP, InGaAs double heterojunction bipolar transistors
- Jazyk
- anglicky
- Autori
- Karl Schneider
- Vydavateľ
- Univ.-Verl. Karlsruhe
- Vydavateľ
- 2006
- Väzba
- mäkká
- ISBN10
- 3866440219
- ISBN13
- 9783866440210
- Kategórie
- Skriptá a vysokoškolské učebnice
- Anotácia
- This work describes the development process of state-of-the-art electrical broadband amplifiers, which are suitable as modulator drivers in electrical time division multiplex (ETDM) systems, operating at 80 Gbit/s. The realization is successfully accomplished in three major development steps: optimization of the transistor geometry of InP-based Double Heterojunction Bipolar Transistors (DHBT), extraction of large- and small-signal models, and design and realization of lumped and distributed amplifiers.