Two-dimensional hole systems in indium-based quantum well heterostructures
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Viac o knihe
The complex spin-orbit interaction (SOI) of two-dimensional hole gas (2DHG) systems - the relativistic coupling of the hole spin degree of freedom to their movement in an electric field - is of fundamental interest in spin physics due to its key role for spin manipulation in spintronic devices. In this work, we were able to evaluate the tunability of Rashba-SOI-related parameters in the 2DHG system of In0.75Al0.25As/In0.75Ga0.25As/InAs: Mn quantum well heterostructures experimentally by analyzing the hole density evolution of quantum interference effects at low magnetic fields. We achieved to cover a significant range of hole densities by the joint action of the variation of the manganese modulation doping concentration during molecular beam epitaxy and external field-effect-mediated manipulation of the 2D carrier density in Hall bar devices by a metallic topgate.
Nákup knihy
Two-dimensional hole systems in indium-based quantum well heterostructures, Josef Loher
- Jazyk
- Rok vydania
- 2016
Doručenie
Platobné metódy
2021 2022 2023
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- Titul
- Two-dimensional hole systems in indium-based quantum well heterostructures
- Jazyk
- anglicky
- Autori
- Josef Loher
- Vydavateľ
- Universitätsverlag Regensburg
- Rok vydania
- 2016
- ISBN10
- 3868451374
- ISBN13
- 9783868451375
- Séria
- Dissertationsreihe der Fakultät für Physik der Universität Regensburg
- Kategórie
- Skriptá a vysokoškolské učebnice
- Anotácia
- The complex spin-orbit interaction (SOI) of two-dimensional hole gas (2DHG) systems - the relativistic coupling of the hole spin degree of freedom to their movement in an electric field - is of fundamental interest in spin physics due to its key role for spin manipulation in spintronic devices. In this work, we were able to evaluate the tunability of Rashba-SOI-related parameters in the 2DHG system of In0.75Al0.25As/In0.75Ga0.25As/InAs: Mn quantum well heterostructures experimentally by analyzing the hole density evolution of quantum interference effects at low magnetic fields. We achieved to cover a significant range of hole densities by the joint action of the variation of the manganese modulation doping concentration during molecular beam epitaxy and external field-effect-mediated manipulation of the 2D carrier density in Hall bar devices by a metallic topgate.